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Title: Surface-barrier photoconverters with graded-gap layers in the space-charge region

A novel possibility of controlling the parameters of p-Cu{sub 1.8}S-n-II-VI surface-barrier structures by embedding a thin graded-gap layer into a photoconverter space-charge region (SCR) is implemented. The feature of quasi-electric fields built in the SCR, i.e., the fact that an increase in the drift field for minority carriers can be accompanied by a decrease in the potential barrier for majority carriers, is considered. The proper choice of the parameters of the Cd{sub x}Zn{sub 1−x}S graded-gap layer embedded in the Cu{sub 1.8}S-ZnS structure SCR made it possible to double the quantum efficiency in the ultraviolet spectral region. For Cu{sub 1.8}S-CdS photoconverters with a (CdS){sub x}(ZnSe){sub 1−x} intermediate layer, dark diode currents are decreased by three orders of magnitude while retaining a high quantum efficiency.
Authors:
; ; ; ;  [1]
  1. National Academy of Sciences, Lashkaryov Institute of Semiconductor Physics (Ukraine)
Publication Date:
OSTI Identifier:
22469980
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 4; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CADMIUM SULFIDES; DIFFUSION BARRIERS; ELECTRIC CURRENTS; ELECTRIC FIELDS; LAYERS; PHOTOVOLTAIC CONVERSION; POTENTIALS; P-TYPE CONDUCTORS; QUANTUM EFFICIENCY; SPACE CHARGE; SURFACES; ULTRAVIOLET SPECTRA; ZINC SELENIDES; ZINC SULFIDES