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Title: Admittance spectroscopy of solar cells based on GaPNAs layers

Admittance spectroscopy is used to study defect levels in the layers of a GaPNAs quaternary solid solution. Centers with an activation energy of 0.22 eV and a capture cross section of ∼2.4 × 10{sup −15} cm{sup 2} are found in doped n-GaPNAs layers grown on GaP substrates. These centers correspond to already known Si{sub Ga} + V{sub P} defects in n-GaP; annealing decreases their concentration by several times. A level with an activation energy of 0.23–0.24 eV and capture cross section of ∼9.0 × 10{sup −20} cm{sup 2} is found in undoped GaPNAs layers grown on Si and GaP substrates. The concentration of these centers substantially decreases upon annealing, and, at annealing temperatures exceeding 600°C, there is absolutely no response from these defects. For undoped GaPNAs layers grown on GaP substrates, a level with an activation energy of 0.18 eV and capture cross section of ∼1.1 × 10{sup −16} cm{sup 2} is also found. The concentration of these centers remains unchanged upon annealing.
Authors:
; ; ; ;  [1]
  1. Russian Academy of Sciences, St. Petersburg Academic University, Nanotechnology Research and Education Center (Russian Federation)
Publication Date:
OSTI Identifier:
22469979
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 4; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACTIVATION ENERGY; ANNEALING; ARSENIDES; CAPTURE; CONCENTRATION RATIO; CROSS SECTIONS; DOPED MATERIALS; EV RANGE; GALLIUM PHOSPHIDES; LAYERS; NITRIDES; SILICON; SOLAR CELLS; SOLID SOLUTIONS; SPECTROSCOPY; SUBSTRATES