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Title: Irradiation of 4H-SiC UV detectors with heavy ions

Ultraviolet (UV) photodetectors based on Schottky barriers to 4H-SiC are formed on lightly doped n-type epitaxial layers grown by the chemical vapor deposition method on commercial substrates. The diode structures are irradiated at 25°C by 167-MeV Xe ions with a mass of 131 amu at a fluence of 6 × 10{sup 9} cm{sup −2}. Comparative studies of the optical and electrical properties of as-grown and irradiated structures with Schottky barriers are carried out in the temperature range 23–180°C. The specific features of changes in the photosensitivity and electrical characteristics of the detector structures are accounted for by the capture of photogenerated carriers into traps formed due to fluctuations of the conduction-band bottom and valence-band top, with subsequent thermal dissociation.
Authors:
; ;  [1] ; ;  [2] ;  [3] ;  [4]
  1. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
  2. Aix Marseille Université, OPTO-PV, IM2NP, CNRS UMR 7334 (France)
  3. St. Petersburg State Electrotechnical University LETI (Russian Federation)
  4. Joint Institute for Nuclear Research (Russian Federation)
Publication Date:
OSTI Identifier:
22469977
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 4; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; DISSOCIATION; DOPED MATERIALS; ELECTRICAL PROPERTIES; ELECTRONIC STRUCTURE; EPITAXY; IRRADIATION; LAYERS; MEV RANGE; PHOTODETECTORS; PHOTOSENSITIVITY; RADIATION EFFECTS; SILICON CARBIDES; SUBSTRATES; TEMPERATURE DEPENDENCE; TRAPS; ULTRAVIOLET RADIATION; VALENCE; XENON IONS