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Title: MBE growth of GaP on a Si substrate

It is shown that single-crystal GaP buffer layers can be formed on a Si substrate by molecular-beam epitaxy, with the “migration-enhanced epitaxy” procedure applied in the stage in which the nucleating layer is formed. When a GaP layer is produced on a p-type silicon substrate, a p-n junction is created in a natural way between the p-Si substrate and the surface n-Si layer produced by the diffusion of phosphorus into the substrate during the course of the epitaxial growth of GaP. This p-n junction can be used as the first junction of a silicon-based multijunction photovoltaic converter.
Authors:
; ; ; ; ;  [1]
  1. Russian Academy of Sciences, St. Petersburg Academic University, Nanotechnology Research and Education Centre (Russian Federation)
Publication Date:
OSTI Identifier:
22469975
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 4; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DIFFUSION; GALLIUM PHOSPHIDES; LAYERS; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; N-TYPE CONDUCTORS; PHOSPHORUS; PHOTOVOLTAIC EFFECT; P-N JUNCTIONS; P-TYPE CONDUCTORS; SILICON; SUBSTRATES; SURFACES