MBE growth of GaP on a Si substrate

Journal Article · Wed Apr 15 00:00:00 EDT 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615040235· OSTI ID:22469975

Lazarenko, A. A.; Nikitina, E. V.; Pirogov, E. V.; Gudovskikh, A. S.; Egorov, A. Yu. ^[1]

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1. Russian Academy of Sciences, St. Petersburg Academic University, Nanotechnology Research and Education Centre (Russian Federation)

It is shown that single-crystal GaP buffer layers can be formed on a Si substrate by molecular-beam epitaxy, with the “migration-enhanced epitaxy” procedure applied in the stage in which the nucleating layer is formed. When a GaP layer is produced on a p-type silicon substrate, a p-n junction is created in a natural way between the p-Si substrate and the surface n-Si layer produced by the diffusion of phosphorus into the substrate during the course of the epitaxial growth of GaP. This p-n junction can be used as the first junction of a silicon-based multijunction photovoltaic converter.

• OSTI ID: 22469975
• Journal Information: Semiconductors, Vol. 49, Issue 4; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DIFFUSION
GALLIUM PHOSPHIDES
LAYERS
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
N-TYPE CONDUCTORS
PHOSPHORUS
PHOTOVOLTAIC EFFECT
P-N JUNCTIONS
P-TYPE CONDUCTORS
SILICON
SUBSTRATES
SURFACES