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Title: GaInP semiconductor compounds doped with the Sb isovalent impurity

GaInP{sub 1−x}Sb{sub x} layers containing different Sb fractions are produced by metal-organic vaporphase epitaxy on GaAs and Ge substrates. The charge-carrier mobilities in the GaInP{sub 1−x}Sb{sub x} layers are measured at room temperature and 77 K. The room-temperature charge-carrier mobilities in the GaInP{sub 1−x}Sb{sub x} layers additionally doped with donor and acceptor impurities are measured. The photoluminescence peaks of GaInP{sub 1−x}Sb{sub x} are detected. The influence of the Sb impurity on the band gap and charge-carrier mobility in GaInP is determined.
Authors:
 [1]
  1. OAO Saturn (Russian Federation)
Publication Date:
OSTI Identifier:
22469969
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 5; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANTIMONY; CARRIER MOBILITY; CHARGE CARRIERS; CONCENTRATION RATIO; DOPED MATERIALS; EPITAXY; GALLIUM ARSENIDES; GERMANIUM; IMPURITIES; LAYERS; ORGANOMETALLIC COMPOUNDS; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SUBSTRATES; TEMPERATURE DEPENDENCE