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Title: Spectrometry of the Rutherford backscattering of ions and the Raman scattering of light in GaS single crystals irradiated with 140-keV H{sub 2}{sup +} ions

The methods of the Raman scattering of light and Rutherford backscattering are used to study the degree of structural disorder in layered GaS crystals before and after irradiation with 140-keV H{sub 2}{sup +} ions. It is shown that the distribution of the crystal’s components over depth is homogeneous; for doses as high as 5 × 10{sup 15} cm{sup −2}, the stoichiometric composition of the compound’s components is retained. The experimental value of the critical dose for the beginning of amorphization amounts to about 5 × 10{sup 15} cm{sup −2} and is in accordance with the calculated value. The results obtained by the method of the Raman scattering of light confirm conservation of crystalline structure and the start of the amorphization process.
Authors:
;  [1] ; ;  [2] ; ; ;  [1]
  1. Azerbaijan National Academy of Sciences, Institute of Radiation Problems (Azerbaijan)
  2. Belarus State University, RTCCU of “Nanotechnology and Physical Electronics” (Belarus)
Publication Date:
OSTI Identifier:
22469968
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 5; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AMORPHOUS STATE; CRYSTAL STRUCTURE; CRYSTALS; GALLIUM SULFIDES; HYDROGEN IONS 2 PLUS; ION IMPLANTATION; IRRADIATION; LAYERS; PHYSICAL RADIATION EFFECTS; RAMAN EFFECT; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; STOICHIOMETRY; VISIBLE RADIATION