Spectrometry of the Rutherford backscattering of ions and the Raman scattering of light in GaS single crystals irradiated with 140-keV H{sub 2}{sup +} ions
- Belarus State University, RTCCU of “Nanotechnology and Physical Electronics” (Belarus)
- Azerbaijan National Academy of Sciences, Institute of Radiation Problems (Azerbaijan)
The methods of the Raman scattering of light and Rutherford backscattering are used to study the degree of structural disorder in layered GaS crystals before and after irradiation with 140-keV H{sub 2}{sup +} ions. It is shown that the distribution of the crystal’s components over depth is homogeneous; for doses as high as 5 × 10{sup 15} cm{sup −2}, the stoichiometric composition of the compound’s components is retained. The experimental value of the critical dose for the beginning of amorphization amounts to about 5 × 10{sup 15} cm{sup −2} and is in accordance with the calculated value. The results obtained by the method of the Raman scattering of light confirm conservation of crystalline structure and the start of the amorphization process.
- OSTI ID:
- 22469968
- Journal Information:
- Semiconductors, Vol. 49, Issue 5; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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