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Title: Carriers confinement study of GaNAsBi/GaAs QWs emitting at 1.3 and 1.55 μm

Band structures of GaN{sub 0.58y}As{sub 1–1.58y}Bi{sub y}/GaAs quantum wells (QWs) were studied using the band anticrossing model and the envelope function approximation. The confined states energies and the oscillator strengths of interband transitions were determined for well widths L{sub W} and Bi composition y varying in the range of 4–10 nm and 0–0.07 respectively. The emissions 1.3 and 1.55 μm were reached for specific couples (L{sub W}, y). The band anticrossing effect on the in-plane carriers effective mass has been investigated at k = 0. The absorbance spectra were calculated for QWs operating at 1.3 and 1.55 μm.
Authors:
; ; ; ;  [1]
  1. University of Monastir, Faculty of Sciences, Unité de Recherche sur les Hetero-Epitaxies et Applications (Tunisia)
Publication Date:
OSTI Identifier:
22469966
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 5; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE; APPROXIMATIONS; BISMUTH COMPOUNDS; CHARGE CARRIERS; CONFINEMENT; EFFECTIVE MASS; ELECTRONIC STRUCTURE; ENERGY-LEVEL TRANSITIONS; GALLIUM ARSENIDES; GALLIUM NITRIDES; OSCILLATOR STRENGTHS; QUANTUM WELLS