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Title: Features of the uniaxial elastic deformation of X-ray-irradiated p-Si crystals

Changes in the conductivity of p-Si single-crystals irradiated at room temperature during their mechanical compression and stress relief are studied. It is shown that irradiation is accompanied by the generation of point defects in silicon, which play the role of stoppers for dislocation motion. The effect of “radiation memory” in “electronic” silicon crystals is detected.
Authors:
; ; ;  [1]
  1. Ivan Franko Lviv National University, Department of Electronics (Ukraine)
Publication Date:
OSTI Identifier:
22469962
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 5; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COMPRESSION; DEFORMATION; DISLOCATIONS; ELECTRIC CONDUCTIVITY; IRRADIATION; MONOCRYSTALS; POINT DEFECTS; P-TYPE CONDUCTORS; SILICON; STRESSES; TEMPERATURE RANGE 0273-0400 K; X RADIATION