Photoluminescence of GaAs/AlGaAs quantum ring arrays

Journal Article · Fri May 15 00:00:00 EDT 2015 · Semiconductors

DOI:https://doi.org/10.1134/S106378261505022X· OSTI ID:22469960

Vasil’evskii, I. S.; Vinichenko, A. N.; Eremin, I. S. ^[1]; Zhigunov, D. M. ^[2]; Kargin, N. I.; Kolentsova, O. S.; Martyuk, P. A.; Strikhanov, M. N. ^[1]

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1. National Research Nuclear University “MEPhI” (Russian Federation)
2. Moscow State University, Faculty of Physics (Russian Federation)

Samples of epitaxial structures with GaAs/AlGaAs quantum rings different in morphology are grown by droplet epitaxy. The photoluminescence spectra of the samples are recorded at temperatures of 20–90 and 300 K. Intense peaks defined by quantum confinement of the charge-carrier energy in the quantum rings are observed in the optical region. The peaks are identified by estimating the energy of the ground state of electrons and holes in GaAs quantum rings and by recording the spectra of the samples after removing the layers with the quantum rings by etching. The average dimensions of the quantum rings are determined by atomic force microscopy and scanning electron microscopy. Some inferences about the factors that influence the emission spectrum and intensity of the epitaxial structures with quantum rings are drawn.

• OSTI ID: 22469960
• Journal Information: Semiconductors, Vol. 49, Issue 5; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM ARSENIDES
ATOMIC FORCE MICROSCOPY
CHARGE CARRIERS
CONFINEMENT
DROPLETS
ELECTRONS
EMISSION SPECTRA
EPITAXY
GALLIUM ARSENIDES
GROUND STATES
HOLES
MORPHOLOGY
PHOTOLUMINESCENCE
QUANTUM WIRES
SCANNING ELECTRON MICROSCOPY
TEMPERATURE DEPENDENCE