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Title: Photoluminescence of GaAs/AlGaAs quantum ring arrays

Samples of epitaxial structures with GaAs/AlGaAs quantum rings different in morphology are grown by droplet epitaxy. The photoluminescence spectra of the samples are recorded at temperatures of 20–90 and 300 K. Intense peaks defined by quantum confinement of the charge-carrier energy in the quantum rings are observed in the optical region. The peaks are identified by estimating the energy of the ground state of electrons and holes in GaAs quantum rings and by recording the spectra of the samples after removing the layers with the quantum rings by etching. The average dimensions of the quantum rings are determined by atomic force microscopy and scanning electron microscopy. Some inferences about the factors that influence the emission spectrum and intensity of the epitaxial structures with quantum rings are drawn.
Authors:
; ; ;  [1] ;  [2] ; ; ; ;  [1]
  1. National Research Nuclear University “MEPhI” (Russian Federation)
  2. Moscow State University, Faculty of Physics (Russian Federation)
Publication Date:
OSTI Identifier:
22469960
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 5; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM ARSENIDES; ATOMIC FORCE MICROSCOPY; CHARGE CARRIERS; CONFINEMENT; DROPLETS; ELECTRONS; EMISSION SPECTRA; EPITAXY; GALLIUM ARSENIDES; GROUND STATES; HOLES; MORPHOLOGY; PHOTOLUMINESCENCE; QUANTUM WIRES; SCANNING ELECTRON MICROSCOPY; TEMPERATURE DEPENDENCE