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Title: Interstitial carbon formation in irradiated copper-doped silicon

The influence of a copper impurity on the spectrum of defects induced in p-Si crystals containing a low oxygen concentration by irradiation with electrons with an energy of 5 MeV at room temperature is studied by deep-level transient spectroscopy. It is found that interstitial carbon atoms (C{sub i}) which are the dominant defects in irradiated samples free of copper are unobservable immediately after irradiation, if the concentration of mobile interstitial copper atoms (Cu{sub i}) is higher than the concentration of radiation defects. This phenomenon is attributed to the formation of (Cu{sub i}, C{sub i}) complexes, which do not introduce levels into the lower half of the band gap. It is shown that these complexes dissociate upon annealing at temperatures of 300–340 K and, thus, bring about the appearance of interstitial carbon.
Authors:
 [1] ;  [2]
  1. Russian Academy of Sciences, Institute of Microelectronics Technology and High-Purity Materials (Russian Federation)
  2. Technische Universität Dresden (Germany)
Publication Date:
OSTI Identifier:
22469911
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 6; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; ATOMS; CARBON; CONCENTRATION RATIO; COPPER; CRYSTALS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DOPED MATERIALS; ELECTRONS; INTERSTITIALS; IODINE COMPLEXES; IRRADIATION; MEV RANGE; OXYGEN; PHYSICAL RADIATION EFFECTS; P-TYPE CONDUCTORS; SILICON