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Title: Interstitial carbon formation in irradiated copper-doped silicon

Abstract

The influence of a copper impurity on the spectrum of defects induced in p-Si crystals containing a low oxygen concentration by irradiation with electrons with an energy of 5 MeV at room temperature is studied by deep-level transient spectroscopy. It is found that interstitial carbon atoms (C{sub i}) which are the dominant defects in irradiated samples free of copper are unobservable immediately after irradiation, if the concentration of mobile interstitial copper atoms (Cu{sub i}) is higher than the concentration of radiation defects. This phenomenon is attributed to the formation of (Cu{sub i}, C{sub i}) complexes, which do not introduce levels into the lower half of the band gap. It is shown that these complexes dissociate upon annealing at temperatures of 300–340 K and, thus, bring about the appearance of interstitial carbon.

Authors:
 [1]
  1. Technische Universität Dresden (Germany)
Publication Date:
OSTI Identifier:
22469911
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 49; Journal Issue: 6; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; ATOMS; CARBON; CONCENTRATION RATIO; COPPER; CRYSTALS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DOPED MATERIALS; ELECTRONS; INTERSTITIALS; IODINE COMPLEXES; IRRADIATION; MEV RANGE; OXYGEN; PHYSICAL RADIATION EFFECTS; P-TYPE CONDUCTORS; SILICON

Citation Formats

Yarykin, N. A., E-mail: NAY@iptm.ru, and Weber, J. Interstitial carbon formation in irradiated copper-doped silicon. United States: N. p., 2015. Web. doi:10.1134/S1063782615060263.
Yarykin, N. A., E-mail: NAY@iptm.ru, & Weber, J. Interstitial carbon formation in irradiated copper-doped silicon. United States. https://doi.org/10.1134/S1063782615060263
Yarykin, N. A., E-mail: NAY@iptm.ru, and Weber, J. 2015. "Interstitial carbon formation in irradiated copper-doped silicon". United States. https://doi.org/10.1134/S1063782615060263.
@article{osti_22469911,
title = {Interstitial carbon formation in irradiated copper-doped silicon},
author = {Yarykin, N. A., E-mail: NAY@iptm.ru and Weber, J.},
abstractNote = {The influence of a copper impurity on the spectrum of defects induced in p-Si crystals containing a low oxygen concentration by irradiation with electrons with an energy of 5 MeV at room temperature is studied by deep-level transient spectroscopy. It is found that interstitial carbon atoms (C{sub i}) which are the dominant defects in irradiated samples free of copper are unobservable immediately after irradiation, if the concentration of mobile interstitial copper atoms (Cu{sub i}) is higher than the concentration of radiation defects. This phenomenon is attributed to the formation of (Cu{sub i}, C{sub i}) complexes, which do not introduce levels into the lower half of the band gap. It is shown that these complexes dissociate upon annealing at temperatures of 300–340 K and, thus, bring about the appearance of interstitial carbon.},
doi = {10.1134/S1063782615060263},
url = {https://www.osti.gov/biblio/22469911}, journal = {Semiconductors},
issn = {1063-7826},
number = 6,
volume = 49,
place = {United States},
year = {Mon Jun 15 00:00:00 EDT 2015},
month = {Mon Jun 15 00:00:00 EDT 2015}
}