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Title: Effect of copper on the recombination activity of extended defects in silicon

The effect of copper atoms introduced by high-temperature diffusion on the recombination properties of dislocations and dislocation trails in p-type single-crystal silicon is studied by the electron-beam-induced current technique. It is shown that, in contrast to dislocations, dislocation trails exhibit an increase in recombination activity after the introduction of copper. Bright contrast appearance in the vicinity of dislocation trails is detected after the diffusion of copper and quenching of the samples. The contrast depends on the defect density in these trails.
Authors:
;  [1]
  1. Russian Academy of Sciences, Institute of Microelectronics Technology and High-Purity Materials (Russian Federation)
Publication Date:
OSTI Identifier:
22469910
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 6; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMS; COPPER; DIFFUSION; DISLOCATIONS; MONOCRYSTALS; P-TYPE CONDUCTORS; QUENCHING; RECOMBINATION; SCANNING ELECTRON MICROSCOPY; SILICON; TEMPERATURE DEPENDENCE