skip to main content

SciTech ConnectSciTech Connect

Title: EBIC and LBIC studies of the properties of extended defects in plastically deformed silicon

The results of comparative experimental studies of one- and two-dimensional defects in plastically deformed silicon by the electron-beam-induced current (EBIC) and light-beam-induced current (LBIC) techniques are reported. It is shown that the contrast of two-dimensional defects (dislocation trails) in the LBIC method can by much more pronounced than that in the EBIC technique, which is in good agreement with the results of calculations. The higher sensitivity of the LBIC technique is mainly due to deeper penetration of the optical beam into the material in comparison to the penetration of the electron beam of a scanning electron microscope.
Authors:
; ;  [1]
  1. Russian Academy of Sciences, Institute of Microelectronic Technology and Ultra-High-Purity Materials (Russian Federation)
Publication Date:
OSTI Identifier:
22469909
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 6; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COMPARATIVE EVALUATIONS; DISLOCATIONS; ELECTRIC CURRENTS; ELECTRON BEAMS; PENETRATION DEPTH; PHOTON BEAMS; SCANNING ELECTRON MICROSCOPY; SENSITIVITY; SILICON; TWO-DIMENSIONAL SYSTEMS; VISIBLE RADIATION