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Title: Recombination activity of interfaces in multicrystalline silicon

The electrical activity of grain boundaries in multicrystalline silicon grown from metallurgical silicon by the Bridgman method is investigated by the method of electron-beam induced current. The main tendencies of atypical manifestation of the local electrical activity of Σ3(111) and Σ9(110) special boundaries are revealed. The structural features of the grain boundaries after selective etching and the impurity-distribution characteristics in multicrystalline silicon are determined by the methods of electron backscattering diffraction and electron-probe microanalysis.
Authors:
 [1] ;  [2] ; ;  [1] ;  [2]
  1. Russian Academy of Sciences, Vinogradov Institute of Geochemistry, Siberian Branch (Russian Federation)
  2. Russian Academy of Sciences, Institute of Microelectronics Technology and High-Purity Materials (Russian Federation)
Publication Date:
OSTI Identifier:
22469908
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 6; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BRIDGMAN METHOD; CRYSTAL STRUCTURE; ELECTRON DIFFRACTION; ELECTRON MICROPROBE ANALYSIS; ETCHING; GRAIN BOUNDARIES; IMPURITIES; INTERFACES; RECOMBINATION; SCANNING ELECTRON MICROSCOPY; SILICON