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Title: Quantitative description of the properties of extended defects in silicon by means of electron- and laser-beam-induced currents

A solar cell on a wafer of multicrystalline silicon containing grain boundaries was studied by the induced-current method. The sample was scanned by an electron beam and by a laser beam at two wavelengths (980 and 635 nm). The recorded induced-current maps were aligned by means of a specially developed code, that enabled to analyze the same part of the grain boundary for three types of measurements. Optimization of the residual between simulated induced-current profiles and those obtained experimentally yielded quantitative estimates of the characteristics of a sample and its defects: the diffusion length of minority carriers and recombination velocity at the grain boundary.
Authors:
;  [1] ;  [2] ;  [1]
  1. Russian Academy of Sciences, Institute of Microelectronics Technology and High-Purity Materials (Russian Federation)
  2. Russian Academy of Sciences, Kharkevich Institute for Information Transmission Problems (Russian Federation)
Publication Date:
OSTI Identifier:
22469905
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 6; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHARGE CARRIERS; DIFFUSION LENGTH; ELECTRIC CURRENTS; ELECTRON BEAMS; ELECTRON SCANNING; ELECTRONS; GRAIN BOUNDARIES; LASER RADIATION; OPTIMIZATION; RECOMBINATION; SILICON; SOLAR CELLS; VELOCITY