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Title: Study of the properties of silicon-based semiconductor converters for betavoltaic cells

Silicon p-i-n diodes are studied in a scanning electron microscope under conditions simulating the β-radiation from a radioactive Ni{sup 63} source with an activity of 10 mCi/cm{sup 2}. The attainable parameters of β-voltaic cells with a source of this kind and a silicon-based converter of β-particle energy to electric current are estimated. It is shown that the power of elements of this kind can reach values of ∼10 nW/cm{sup 2} even for a cell with an area of one centimeter, which is rather close to the calculated value.
Authors:
 [1] ;  [2]
  1. National Research Center Kurchatov Institute (Russian Federation)
  2. Russian Academy of Sciences, Institute of Microelectronics Technology (Russian Federation)
Publication Date:
OSTI Identifier:
22469904
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 6; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BETAVOLTAIC CELLS; ELECTRIC BATTERIES; ELECTRIC CURRENTS; NICKEL 63; P-N JUNCTIONS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SILICON