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Title: Linear chains of Ge/Si quantum dots grown on a prepatterned surface formed by ion irradiation

The growth of Ge nanoclusters on a prepatterned Si (100) surface formed by imprint lithography in combination with subsequent irradiation with Ge{sup +} ions is studied. The prepatterned surface presents a system of parallel 10-nm-wide grooves repeating with a period of 180 nm. Irradiation of the substrate was conducted at two temperatures, room temperature (cold irradiation) and 400°C (hot irradiation). It is shown that, during epitaxy (550–700°C), the residual radiation defects located in the bulk under the grooves suppress the nucleation of Ge nanoclusters in the grooves. In the case of prepatterned substrates, from which imperfect regions are completely removed, nanoclusters grow in the grooves.
Authors:
; ; ; ; ; ; ; ; ;  [1]
  1. Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
Publication Date:
OSTI Identifier:
22469903
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 6; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CERIUM IONS; EPITAXY; GERMANIUM; GERMANIUM IONS; IRRADIATION; NANOSTRUCTURES; NUCLEATION; QUANTUM DOTS; RADIATION EFFECTS; SILICON; SOLID CLUSTERS; SUBSTRATES; SURFACES; TEMPERATURE DEPENDENCE