skip to main content

Title: On the electronic properties of GaSb irradiated with reactor neutrons and its charge neutrality level

The electronic properties and the limiting position of the Fermi level in p-GaSb crystals irradiated with full-spectrum reactor neutrons at up to a fluence of 8.6 × 10{sup 18} cm{sup −2} are studied. It is shown that the irradiation of GaSb with reactor neutrons results in an increase in the concentration of free holes to p{sub lim} = (5−6) × 10{sup 18} cm{sup −3} and in pinning of the Fermi level at the limiting position F{sub lim} close to E{sub V} + 0.02 eV at 300 K. The effect of the annealing of radiation defects in the temperature range 100–550°C is explored.
Authors:
 [1] ;  [2] ; ; ;  [1]
  1. Obninsk Branch, Karpov Institute of Physical Chemistry (Russian Federation)
  2. National Research Tomsk State University (Russian Federation)
Publication Date:
OSTI Identifier:
22469901
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 6; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CONCENTRATION RATIO; CRYSTALS; EV RANGE; FERMI LEVEL; GALLIUM ANTIMONIDES; HOLES; IRRADIATION; MAGNETIC FLUX; NEUTRON FLUENCE; P-TYPE CONDUCTORS; RADIATION EFFECTS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K