skip to main content

SciTech ConnectSciTech Connect

Title: On the effect of bias on the behavior of MOS structures subjected to ionizing radiation

Using a quantitative model [6], the analysis of published data on the effect of the gate bias on the behavior of MOS structure subjected to ionizing radiation is performed. It is shown that, along with hydrogen-containing traps, there are hydrogen-free hole traps in samples with a low content of hydrogen; traps of both types are distributed inhomogeneously over the thickness of the gate insulator. In addition to ionized hydrogen, neutral hydrogen is involved in the formation of surface states and provides the main contribution to this process at negative gate bias. A decrease in the shift of the threshold voltage in the case of high fields is caused by an increase in the drift component of the hole drain to the electrodes.
Authors:
 [1]
  1. St. Petersburg State Electrotechnical University “LETI” (Russian Federation)
Publication Date:
OSTI Identifier:
22469899
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 6; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRIC POTENTIAL; ELECTRODES; ENERGY LEVELS; HOLES; HYDROGEN; IONIZATION; IRRADIATION; RADIATION EFFECTS; SILICON OXIDES; SURFACES; THICKNESS; TRAPS