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Title: Wannier-Mott excitons in semiconductors with a superlattice

The effect of the motion of a Wannier-Mott exciton in semiconductors with a superlattice formed by heterojunctions on the exciton binding energy and wave function is analyzed. This effect arises as a result of the fact that the dispersion laws of the electron and hole that form an exciton in a superlattice differ from the quadratic law. The investigated one-dimensional superlattice consists of alternating semiconductor layers with different energy positions of the conduction and valence bands, i.e., with one-dimensional wells and barriers. The exciton state in a superlattice consisting of quantum dots is analyzed. It is demonstrated that the closer the electron and hole effective masses, the greater the dependence of the binding energy on the exciton quasi-momentum. The possibility of replacing the tunneling excitation transfer between superlattice cells with the dipole-dipole one at certain exciton quasi-wave vector values is investigated.
Authors:
 [1]
  1. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22469895
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 6; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BINDING ENERGY; DIPOLES; ELECTRONS; EXCITATION; EXCITONS; HETEROJUNCTIONS; HOLES; LAYERS; ONE-DIMENSIONAL CALCULATIONS; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; SUPERLATTICES; TUNNEL EFFECT; VALENCE