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Title: Hopping transport in the space-charge region of p-n structures with InGaN/GaN QWs as a source of excess 1/f noise and efficiency droop in LEDs

It is shown that the emission efficiency and the 1/f noise level in light-emitting diodes with InGaN/GaN quantum wells correlate with how the differential resistance of a diode varies with increasing current. Analysis of the results shows that hopping transport via defect states across the n-type part of the space-charge region results in limitation of the current by the tunneling resistance at intermediate currents and shunting of the n-type barrier at high currents. The increase in the average number of tunneling electrons suppresses the 1/f current noise at intermediate currents. The strong growth in the density of current noise at high currents, S{sub J} ∝ J{sup 3}, is attributed to a decrease in the average number of tunneling electrons as the n-type barrier decreases in height and width with increasing forward bias. The tunneling-recombination leakage current along extended defects grows faster than the tunneling injection current, which leads to emission efficiency droop.
Authors:
; ;  [1] ;  [2] ;  [1] ;  [2] ;  [1]
  1. Ioffe Physical-Technical Institute Russian Academy of Sciences (Russian Federation)
  2. St. Petersburg State Polytechnical University (Russian Federation)
Publication Date:
OSTI Identifier:
22469893
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 6; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; BYPASSES; DENSITY; ELECTRONS; GALLIUM NITRIDES; INDIUM COMPOUNDS; LEAKAGE CURRENT; LIGHT EMITTING DIODES; N-TYPE CONDUCTORS; PHOTON EMISSION; QUANTUM WELLS; RECOMBINATION; SPACE CHARGE; TUNNEL EFFECT