skip to main content

Title: Silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO{sup x}:H (0 < x < 2)

Published data concerning plasma methods of the fabrication and study of silicon nanoclusters ncl-Si in crystalline (c-SiO{sup 2}) and amorphous (a-SiO{sup x}:H) matrices are reviewed. The effect of radio-fre- quency (RF) and direct-current (dc) discharge modulation on the growth kinetics of ncl-Si is considered. The results of infrared spectroscopy, mass spectrometry, and laser-beam scanning of the plasma composition are analyzed. The behavior of nanoparticles is described depending on their charge and size in plasma under the effect of electric, magnetic, and gravity forces and under the influence of the dynamics of gases contained within the plasma. Infrared spectroscopy data on the a-SiO{sup x}:H film matrix are analyzed. The photoluminescence properties of ncl-Si fabricated using different techniques are described.
Authors:
;  [1]
  1. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22469844
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 7; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION SPECTROSCOPY; DIRECT CURRENT; ELECTRIC DISCHARGES; FILMS; GRAVITATION; HYDROGENATION; INFRARED SPECTRA; LASER RADIATION; MASS SPECTROSCOPY; MATRIX MATERIALS; MODULATION; NANOPARTICLES; NANOSTRUCTURES; PHOTOLUMINESCENCE; PLASMA; SILICON; SILICON OXIDES