skip to main content

SciTech ConnectSciTech Connect

Title: Behavior of the Fe impurity in Hg{sup 3}In{sup 2}Te{sup 6} crystals

Optical and photoelectric measurements reveal that doping with iron leads to the formation of a deep level at E{sup c}–0.69 eV in Hg{sup 3}In{sup 2}Te{sup 6} crystals. When light is absorbed by Fe{sup 2+} impurity centers, both electronic transitions of the impurity-level–conduction-band type and optical transitions between ground and excited states of the aforementioned centers (intracenter transitions) are observed. Investigations of transport phenomena point to the acceptor properties of Fe{sup 2+} centers.
Authors:
; ; ;  [1]
  1. Fed’kovich National University (Ukraine)
Publication Date:
OSTI Identifier:
22469841
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 7; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTALS; ELECTRONIC STRUCTURE; ENERGY-LEVEL TRANSITIONS; EV RANGE; EXCITED STATES; GROUND STATES; IMPURITIES; INDIUM TELLURIDES; IRON; IRON IONS; MERCURY COMPOUNDS; VISIBLE RADIATION