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Title: Nitridation of an unreconstructed and reconstructed (√31 ×√31)R ± 9° (0001) sapphire surface in an ammonia flow

This paper is devoted to the study of the nitridation of unreconstructed and reconstructed (√31 ×√31)R ± 9° (0001) sapphire surfaces in an ammonia flow by reflection high-energy electron diffraction (RHEED). The experimental results show that sapphire nitridation occurs on the unreconstructed (1 × 1) surface, which results in AlN phase formation on the substrate surface. However, if sapphire nitridation is preceded by high-temperature annealing (1150°C) resulting in sapphire surface reconstruction with formation of the (√31 ×√31)R ± 9° surface, the crystalline AlN phase on the sapphire surface is not formed during surface exposure to an ammonia flow.
Authors:
; ; ; ;  [1]
  1. Siberian Branch of the Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics (Russian Federation)
Publication Date:
OSTI Identifier:
22469838
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 7; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; AMMONIA; ANNEALING; CRYSTAL STRUCTURE; ELECTRON DIFFRACTION; NITRIDATION; REFLECTION; SAPPHIRE; SUBSTRATES; SURFACES; TEMPERATURE DEPENDENCE