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Title: Investigation of the optical properties of GaAs with δ-Si doping grown by molecular-beam epitaxy at low temperatures

Molecular-beam epitaxy is used for the preparation of structures based on “low-temperature” grown GaAs with introduced d-Si doping. Specific features in the photon-energy range of 1.28–1.48 eV are observed in the photoluminescence spectrum after structures annealing at temperatures of 520 and 580°C; these features are related to the formation of point defects and their complexes. The “pump–probe” light transmission measurements reveal that the characteristic lifetimes of nonequilibrium carriers in the fabricated structures amount to T{sup c} ≈ 1.2–1.5 ps.
Authors:
; ; ; ; ; ; ;  [1]
  1. Russian Academy of Sciences, Institute of Ultra-High-Frequency Semiconductor Electronics (Russian Federation)
Publication Date:
OSTI Identifier:
22469837
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 7; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; EMISSION SPECTRA; EV RANGE; GALLIUM ARSENIDES; LIFETIME; LIGHT TRANSMISSION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PHOTONS; POINT DEFECTS; PROBES; SILICON; TEMPERATURE DEPENDENCE