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Title: Influence of buffer-layer construction and substrate orientation on the electron mobilities in metamorphic In{sup 0.70}Al{sup 0.30}As/In{sup 0.76}Ga{sup 0.24}As/In{sup 0.70}Al{sup 0.30}As structures on GaAs substrates

The influence of construction of the buffer layer and misorientation of the substrate on the electrical properties of In{sup 0.70}Al{sup 0.30}As/In{sup 0.76}Ga{sup 0.24}As/In{sup 0.70}Al{sup 0.30}As quantum wells on a GaAs substrate is studied. The temperature dependences (in the temperature range of 4.2 K < T < 300 K) and field dependences (in magnetic fields as high as 6 T) of the sample resistances are measured. Anisotropy of the resistances in different crystallographic directions is detected; this anisotropy depends on the substrate orientation and construction of the metamorphic buffer layer. In addition, the Hall effect and the Shubnikov–de Haas effect are studied. The Shubnikov–de Haas effect is used to determine the mobilities of electrons separately in several occupied dimensionally quantized subbands in different crystallographic directions. The calculated anisotropy of mobilities is in agreement with experimental data on the anisotropy of the resistances.
Authors:
 [1] ;  [2] ;  [1] ; ; ; ; ;  [3]
  1. Moscow State University, Faculty of Physics (Russian Federation)
  2. National Research Center “Kurchatov Institute” (Russian Federation)
  3. Russian Academy of Sciences, Institute of Ultra-High-Frequency Semiconductor Electronics (Russian Federation)
Publication Date:
OSTI Identifier:
22469835
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 7; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM COMPOUNDS; ANISOTROPY; BUFFERS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRONS; GALLIUM ARSENIDES; HALL EFFECT; INDIUM ARSENIDES; LAYERS; MAGNETIC FIELDS; ORIENTATION; QUANTUM WELLS; SHUBNIKOV-DE HAAS EFFECT; SUBSTRATES; TEMPERATURE DEPENDENCE