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Title: On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates

Band offsets at the heterointerface are calculated for various combinations of InAlGaAs/AlGaAs heteropairs that can be synthesized on GaAs substrates in the layer-by-layer pseudomorphic growth mode. Patterns which make it possible to obtain an asymmetric barrier layer providing the almost obstruction-free transport of holes and the highest possible barrier height for electrons are found. The optimal compositions of both compounds (In{sup 0.232}Al{sup 0.594}Ga{sup 0.174}As/Al{sup 0.355}Ga{sup 0.645}As) at which the flux of electrons across the barrier is at a minimum are determined with consideration for the critical thickness of the indium-containing quaternary solid solution.
Authors:
 [1] ;  [2] ;  [3] ; ;  [1] ;  [4]
  1. Russian Academy of Sciences, St. Petersburg Academic University, Nanotechnology Research and Education Centre (Russian Federation)
  2. Virginia Polytechnic Institute and State University, Blacksburg (United States)
  3. Technical University of Denmark, Kgs. Lyngby, DTU Fotonik (Denmark)
  4. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22469833
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 7; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; ASYMMETRY; DEPLETION LAYER; ELECTRONS; GALLIUM ARSENIDES; HETEROJUNCTIONS; HOLES; INDIUM COMPOUNDS; INTERFACES; LASERS; OPTIMIZATION; SOLID SOLUTIONS; SUBSTRATES