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Title: Optical and electrical properties of silicon nanopillars

The electrical and optical properties of silicon nanopillars (Si NPs) are studied. Electron-beam lithography and reactive ion etching are used for the formation of ordered Si-NP arrays. The Si NPs with a diameter from 60 to 340 nm and a height from 218 to 685 nm are formed. The Si NPs are coated with a TiON{sup x} layer with a thickness of 8 nm for chemical and electrical passivation of the surface. Scanning electron microscopy and atomic-force microscopy are used to characterize the obtained structures. The Si-NP arrays acquire various colors when exposed to “bright-field” illumination. The spectra of reflection from the Si-NP arrays in the wavelength range 500–1150 nm are obtained.
Authors:
; ;  [1] ; ;  [2] ; ;  [1]
  1. Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
  2. St. Petersburg Academic University—Nanotechnology Research and Education Center of the Russian Academy of Sciences (Russian Federation)
Publication Date:
OSTI Identifier:
22469832
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 7; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ATOMIC FORCE MICROSCOPY; COLOR; ELECTRICAL PROPERTIES; ELECTRON BEAMS; ETCHING; ILLUMINANCE; LAYERS; OPTICAL PROPERTIES; PASSIVATION; REFLECTION; SCANNING ELECTRON MICROSCOPY; SILICON; SURFACES