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Title: Avalanche mode of high-voltage overloaded p{sup +}–i–n{sup +} diode switching to the conductive state by pulsed illumination

A simple analytical theory of the picosecond switching of high-voltage overloaded p{sup +}–i–n{sup +} photodiodes to the conductive state by pulsed illumination is presented. The relations between the parameters of structure, light pulse, external circuit, and main process characteristics, i.e., the amplitude of the active load current pulse, delay time, and switching duration, are derived and confirmed by numerical simulation. It is shown that the picosecond light pulse energy required for efficient switching can be decreased by 6–7 orders of magnitude due to the intense avalanche multiplication of electrons and holes. This offers the possibility of using pulsed semiconductor lasers as a control element of optron pairs.
Authors:
 [1]
  1. Lenin All-Russia Electrical Engineering Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22469827
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 7; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; COMPUTERIZED SIMULATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; HOLES; ILLUMINANCE; PHOTODIODES; P-N JUNCTIONS; SEMICONDUCTOR LASERS; TIME DELAY; TOWNSEND DISCHARGE; VISIBLE RADIATION