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Title: Structural defect generation and band-structure features in the HfNi{sub 1−x}Co{sub x}Sn semiconductor

The crystal and electronic structure and magnetic, energy, and kinetic properties of the n-HfNiSn semiconductor heavily doped with the Co acceptor impurity (HfNi{sub 1−x}Co{sub x}Sn) are investigated in the temperature and Co concentration ranges T = 80–400 K and N{sub A}{sup Co} ≈ 9.5 × 10{sup 19}-5.7 × 10{sup 21} cm{sup −3} (x = 0.005–0.30), respectively, and under magnetic field H ≤ 10 kOe. It is established that the degree of compensation of the semiconductor changes due to transformation of the crystal structure upon doping, which leads to the generation of acceptor and donor structural defects. The calculated electronic structure is consistent with the experiment; the HfNi{sub 1−x}Co{sub x}Sn semiconductor is shown to be a promising thermoelectric material. The results obtained are discussed within the Shklovsky-Efros model for a heavily doped and compensated semiconductor.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [3] ;  [5] ;  [3] ;  [4]
  1. National Academy of Sciences of Ukraine, Pidstrygach Institute for Applied Problems in Mechanics and Mathematics (Ukraine)
  2. Universität Wien, Institut für Physikalische Chemie (Austria)
  3. National University Lvivska Politechnika (Ukraine)
  4. Ivan Franko National University of Lviv (Ukraine)
  5. Polish Academy of Sciences, Institute of Low Temperature and Structure Research (Poland)
Publication Date:
OSTI Identifier:
22469826
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 8; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COBALT ALLOYS; CONCENTRATION RATIO; CRYSTALS; DOPED MATERIALS; ELECTRONIC STRUCTURE; HAFNIUM ALLOYS; MAGNETIC FIELDS; NICKEL ALLOYS; N-TYPE CONDUCTORS; PHASE TRANSFORMATIONS; POINT DEFECTS; TEMPERATURE DEPENDENCE; THERMOELECTRIC MATERIALS; TIN ALLOYS