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Title: Emission intensity of the λ = 1.54 μm line in ZnO films grown by magnetron sputtering, diffusion doped with Ce, Yb, Er

The effect of the Er{sup 3+}-ion excitation type on the photoluminescence spectra of crystalline ZnO(ZnO〈Ce, Yb, Er〉) films is determined in the cases of resonant (λ = 532 nm, Er{sup 3+}-ion transition from {sup 4}S{sub 3/2}, {sup 2}H{sub 11/2} levels to {sup 4}I{sub 15/2}) and non-resonant (λ = 325 nm, in the region near the ZnO band-edge emission) excitation. It is shown that resonant excitation gives rise to lines with various emission intensities, characteristic of the Er{sup 3+}-ion intracenter 4f transition with λ = 1535 nm when doping crystalline ZnO films with three rare-earth ions (REIs, Ce, Yb, Er) or with two impurities (Ce, Er) or (Er, Yb), independently of the measurement temperature (T = 83 and 300 K). The doping of crystalline ZnO films with rare-earth impurities (Ce, Yb, Er) leads to the efficient transfer of energy to REIs, a consequence of which is the intense emission of an Er{sup 3+} ion in the IR spectral region at λ{sub max} = 1535 nm. The kick-out diffusion mechanism is used upon the sequential introduction of impurities into semiconductor matrices and during the postgrowth annealing of the ZnO films under study. The crystalline ZnO films doped with Ce, Yb, Er alsomore » exhibit intense emission in the visible spectral region at room temperature, which makes them promising materials for optoelectronics.« less
Authors:
; ; ; ;  [1]
  1. Russian Academy of Sciences, Ioffe Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22469825
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 8; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CERIUM COMPOUNDS; DEUTERIUM; DIFFUSION; DOPED MATERIALS; EMISSION SPECTRA; ERBIUM COMPOUNDS; ERBIUM IONS; EXCITATION; FILMS; MATRIX MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SPUTTERING; YTTERBIUM COMPOUNDS; ZINC OXIDES