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Title: On the shift of the electroluminescence spectra of In{sub x}Ga{sub 1−x}N/GaN structures with various indium contents and various substrate materials caused by the stark effect and mechanical stresses

The shift between the maxima of the electroluminescence spectra of In{sub x}Ga{sub 1−x}N/GaN structures is measured at forward and reverse bias depending on the indium content x in the quantum well and on the substrate material (SiC, AuSn/Si, and Al{sub 2}O{sub 3}). It is established that this shift increases as the indium concentration in the In{sub x}Ga{sub 1−x}N layer and mechanical stresses from the substrate increase.
Authors:
; ; ; ;  [1] ;  [2]
  1. National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)
  2. Poltava National Technical University named after Yurii Kondratyuk (Ukraine)
Publication Date:
OSTI Identifier:
22469823
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 8; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; CONCENTRATION RATIO; ELECTROLUMINESCENCE; EMISSION SPECTRA; GALLIUM NITRIDES; GOLD; INDIUM COMPOUNDS; LAYERS; QUANTUM WELLS; SILICON; SILICON CARBIDES; STARK EFFECT; STRESSES; SUBSTRATES; TIN