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Title: Improvement in the degradation resistance of silicon nanostructures by the deposition of diamond-like carbon films

It is established that the deposition of a diamond-like film onto a structure with silicon nanoclusters in a silicon dioxide matrix yields an increase in the long-wavelength photoluminescence intensity of silicon nanoclusters due to the passivation of active-recombination centers with hydrogen and a shift of the photoluminescence peak to the region of higher photosensitivity of silicon-based solar cells. It is also shown that, due to the deposited diamond-like film, the resistance of such a structure to degradation upon exposure to γ radiation is improved, which is also defined by the effect of the passivation of radiation-induced activerecombination centers by hydrogen that is released from the films during treatment.
Authors:
; ; ; ;  [1] ;  [2] ;  [3]
  1. National Academy of Sciences of Ukraine, Lashkarev Institute of Semiconductor Physics (Ukraine)
  2. Kremenchug National University (Ukraine)
  3. Jilin University, College of Physics (China)
Publication Date:
OSTI Identifier:
22469820
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 8; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEPOSITION; DIAMONDS; FILMS; HYDROGEN; MATRIX MATERIALS; NANOSTRUCTURES; PASSIVATION; PHOTOLUMINESCENCE; PHOTOSENSITIVITY; RECOMBINATION; SILICON; SILICON OXIDES; SOLAR CELLS