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Title: Capacitance-voltage characteristics of (Al/Ti)/Al{sub 2}O{sub 3}/n-GaN MIS structures

The capacitance-voltage characteristics of (Al/Ti)/Al{sub 2}O{sub 3}/n-GaN metal—insulator-semiconductor (MIS) structures are measured and analyzed. n-Type GaN films are grown on sapphire (0001) substrates by the metal-organic chemical vapor deposition method. An aluminum-oxide layer with a thickness of 60 nm is deposited onto the surface of GaN by the method of atomic-layer deposition from the gas phase. Metallic contacts are deposited by the electron-beam evaporation of titanium and aluminum in vacuum. According to the measurement results, the breakdown-field strength of the oxide, its dielectric constant, and the integrated electron density of states at the oxide-semiconductor interface are 5 × 10{sup 6} V/cm, 7.5, and 3 × 10{sup 12} cm{sup −2}, respectively.
Authors:
; ; ; ; ;  [1] ; ; ;  [2]
  1. Russian Academy of Sciences, Ioffe Institute (Russian Federation)
  2. St. Petersburg Electrotechnical University LETI (Russian Federation)
Publication Date:
OSTI Identifier:
22469819
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 8; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM; ALUMINIUM OXIDES; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; ELECTRIC POTENTIAL; ELECTRON BEAMS; ELECTRON DENSITY; EVAPORATION; GALLIUM NITRIDES; INTERFACES; LAYERS; N-TYPE CONDUCTORS; ORGANOMETALLIC COMPOUNDS; PERMITTIVITY; SAPPHIRE; SUBSTRATES; TITANIUM