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Title: Effect of the bimodality of a QD array on the optical properties and threshold characteristics of QD lasers

Heterostructures with InGaAs quantum dots (QDs) are synthesized on vicinal GaAs (001) substrates. The photoluminescence (PL) spectra and threshold characteristics of edge-emitting QD lasers are studied in the temperature range 10-400 K. The structural properties of QDs are examined by transmission electron microscopy. Analysis of the PL spectra demonstrates the bimodality of the QD array, which leads to an unusual temperature behavior of the PL spectra and threshold current density. A model of the population of a bimodal QD array by carriers, describing the observed phenomena, is considered.
Authors:
 [1] ; ;  [2] ;  [3] ;  [2] ; ; ;  [1]
  1. Russian Academy of Sciences, St. Petersburg Academic University, Nanotechnology Research and Education Centre (Russian Federation)
  2. Russian Academy of Sciences, Ioffe Institute (Russian Federation)
  3. University of Notre Dame (United States)
Publication Date:
OSTI Identifier:
22469814
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 8; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL STRUCTURE; EMISSION SPECTRA; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM DOTS; SUBSTRATES; TEMPERATURE DEPENDENCE; THRESHOLD CURRENT; TRANSMISSION ELECTRON MICROSCOPY