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Title: Site-Controlled Growth of Single InP QDs

The MOVPE growth of InP/GaInP quantum dots (QDs) on GaAs substrate “defects” formed by a focused beam of Ga{sup +} ions is studied. It is shown that ordered arrays of QDs with a density of 0.25 (μm){sup −2} can be obtained in the InP/GaInP system. It is demonstrated that effective luminescence can be obtained by using two QD sheets separated by a GaAs/GaInP buffer layer.
Authors:
; ; ; ;  [1] ;  [2] ;  [1]
  1. Russian Academy of Sciences, Ioffe Institute (Russian Federation)
  2. National Research University ITMO (Russian Federation)
Publication Date:
OSTI Identifier:
22469813
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 8; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; GALLIUM IONS; INDIUM PHOSPHIDES; LAYERS; LUMINESCENCE; QUANTUM DOTS; SHEETS; SUBSTRATES; VAPOR PHASE EPITAXY