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Title: Site-Controlled Growth of Single InP QDs

Abstract

The MOVPE growth of InP/GaInP quantum dots (QDs) on GaAs substrate “defects” formed by a focused beam of Ga{sup +} ions is studied. It is shown that ordered arrays of QDs with a density of 0.25 (μm){sup −2} can be obtained in the InP/GaInP system. It is demonstrated that effective luminescence can be obtained by using two QD sheets separated by a GaAs/GaInP buffer layer.

Authors:
; ; ;  [1];  [2];  [1]
  1. Russian Academy of Sciences, Ioffe Institute (Russian Federation)
  2. National Research University ITMO (Russian Federation)
Publication Date:
OSTI Identifier:
22469813
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 49; Journal Issue: 8; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; GALLIUM IONS; INDIUM PHOSPHIDES; LAYERS; LUMINESCENCE; QUANTUM DOTS; SHEETS; SUBSTRATES; VAPOR PHASE EPITAXY

Citation Formats

Vlasov, A. S., E-mail: vlasov@scell.ioffe.ru, Mintairov, A. M., Kalyuzhnyy, N. A., Mintairov, S. A., Salii, R. A., Denisyuk, A. I., and Babunts, R. A. Site-Controlled Growth of Single InP QDs. United States: N. p., 2015. Web. doi:10.1134/S1063782615080230.
Vlasov, A. S., E-mail: vlasov@scell.ioffe.ru, Mintairov, A. M., Kalyuzhnyy, N. A., Mintairov, S. A., Salii, R. A., Denisyuk, A. I., & Babunts, R. A. Site-Controlled Growth of Single InP QDs. United States. https://doi.org/10.1134/S1063782615080230
Vlasov, A. S., E-mail: vlasov@scell.ioffe.ru, Mintairov, A. M., Kalyuzhnyy, N. A., Mintairov, S. A., Salii, R. A., Denisyuk, A. I., and Babunts, R. A. 2015. "Site-Controlled Growth of Single InP QDs". United States. https://doi.org/10.1134/S1063782615080230.
@article{osti_22469813,
title = {Site-Controlled Growth of Single InP QDs},
author = {Vlasov, A. S., E-mail: vlasov@scell.ioffe.ru and Mintairov, A. M. and Kalyuzhnyy, N. A. and Mintairov, S. A. and Salii, R. A. and Denisyuk, A. I. and Babunts, R. A.},
abstractNote = {The MOVPE growth of InP/GaInP quantum dots (QDs) on GaAs substrate “defects” formed by a focused beam of Ga{sup +} ions is studied. It is shown that ordered arrays of QDs with a density of 0.25 (μm){sup −2} can be obtained in the InP/GaInP system. It is demonstrated that effective luminescence can be obtained by using two QD sheets separated by a GaAs/GaInP buffer layer.},
doi = {10.1134/S1063782615080230},
url = {https://www.osti.gov/biblio/22469813}, journal = {Semiconductors},
issn = {1063-7826},
number = 8,
volume = 49,
place = {United States},
year = {Sat Aug 15 00:00:00 EDT 2015},
month = {Sat Aug 15 00:00:00 EDT 2015}
}