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Title: On the generation of charge-carrier recombination centers in the sapphire substrates of silicon-on-sapphire structures

A method for the production of high-quality radiation-resistant silicon-on-sapphire structures through the fabrication of a layer of nanopores in sapphire by helium ion implantation, i.e., by creating charge-carrier recombination centers, is proposed. In this case, the quality of the silicon layer is simultaneously improved. The problem of the thermal stability of the pores is discussed with the aim of analyzing the possibility of producing a microcircuit on the resultant modified silicon-on-sapphire sample. The layer of pores possesses a large total surface area and, hence, decreases the lifetime of charge carriers generated during irradiation of the operating microcircuit. This effect reduces the charge at the silicon-sapphire interface and improves radiation resistance.
Authors:
; ; ;  [1]
  1. Russian Research Centre “Kurchatov Institute” (Russian Federation)
Publication Date:
OSTI Identifier:
22469812
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 8; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHARGE CARRIERS; FABRICATION; HELIUM IONS; INTERFACES; IRRADIATION; LAYERS; LIFETIME; PHASE STABILITY; RADIATION HARDNESS; RECOMBINATION; SAPPHIRE; SILICON; SUBSTRATES; SURFACE AREA