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Title: Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer

The possibility of using substrates based on “strained silicon on insulator” structures with a thin (25 nm) buried oxide layer for the growth of light-emitting SiGe structures is studied. It is shown that, in contrast to “strained silicon on insulator” substrates with a thick (hundreds of nanometers) oxide layer, the temperature stability of substrates with a thin oxide is much lower. Methods for the chemical and thermal cleaning of the surface of such substrates, which make it possible to both retain the elastic stresses in the thin Si layer on the oxide and provide cleaning of the surface from contaminating impurities, are perfecte. It is demonstrated that it is possible to use the method of molecular-beam epitaxy to grow light-emitting SiGe structures of high crystalline quality on such substrates.
Authors:
 [1] ;  [2] ; ;  [1] ;  [2] ; ; ; ;  [1]
  1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
  2. University of Nizhny Novgorod (Russian Federation)
Publication Date:
OSTI Identifier:
22469811
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 8; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GERMANIUM SILICIDES; LAYERS; MOLECULAR BEAM EPITAXY; PHASE STABILITY; SILICON; STRAINS; STRESSES; SUBSTRATES; SURFACES; VISIBLE RADIATION