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Title: Laser interferometric method for determining the carrier diffusion length in semiconductors

A new laser interferometric method for measuring the carrier diffusion length in semiconductors is proposed. The method is based on the interference–absorption interaction of two laser radiations in a semiconductor. Injected radiation generates additional carriers in a semiconductor, which causes a change in the material’s optical constants and modulation of the probing radiation passed through the sample. When changing the distance between carrier generation and probing points, a decrease in the carrier concentration, which depends on the diffusion length, is recorded. The diffusion length is determined by comparing the experimental and theoretical dependences of the probe signal on the divergence of the injector and probe beams. The method is successfully tested on semiconductor samples with different thicknesses and surface states and can be used in scientific research and the electronics industry.
Authors:
 [1] ; ;  [2]
  1. Saint Petersburg State University (Russian Federation)
  2. Saint Petersburg Mining University (Russian Federation)
Publication Date:
OSTI Identifier:
22469808
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 9; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION; CHARGE CARRIERS; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; DIFFUSION LENGTH; INTERFERENCE; LASER RADIATION; MODULATION; PROBES; SEMICONDUCTOR MATERIALS; SURFACES; THICKNESS; THIN FILMS