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Title: Laser interferometric method for determining the carrier diffusion length in semiconductors

Abstract

A new laser interferometric method for measuring the carrier diffusion length in semiconductors is proposed. The method is based on the interference–absorption interaction of two laser radiations in a semiconductor. Injected radiation generates additional carriers in a semiconductor, which causes a change in the material’s optical constants and modulation of the probing radiation passed through the sample. When changing the distance between carrier generation and probing points, a decrease in the carrier concentration, which depends on the diffusion length, is recorded. The diffusion length is determined by comparing the experimental and theoretical dependences of the probe signal on the divergence of the injector and probe beams. The method is successfully tested on semiconductor samples with different thicknesses and surface states and can be used in scientific research and the electronics industry.

Authors:
 [1];
  1. Saint Petersburg State University (Russian Federation)
Publication Date:
OSTI Identifier:
22469808
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 49; Journal Issue: 9; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION; CHARGE CARRIERS; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; DIFFUSION LENGTH; INTERFERENCE; LASER RADIATION; MODULATION; PROBES; SEMICONDUCTOR MATERIALS; SURFACES; THICKNESS; THIN FILMS

Citation Formats

Manukhov, V. V., Fedortsov, A. B., and Ivanov, A. S., E-mail: ivaleks58@gmail.com. Laser interferometric method for determining the carrier diffusion length in semiconductors. United States: N. p., 2015. Web. doi:10.1134/S1063782615090201.
Manukhov, V. V., Fedortsov, A. B., & Ivanov, A. S., E-mail: ivaleks58@gmail.com. Laser interferometric method for determining the carrier diffusion length in semiconductors. United States. https://doi.org/10.1134/S1063782615090201
Manukhov, V. V., Fedortsov, A. B., and Ivanov, A. S., E-mail: ivaleks58@gmail.com. 2015. "Laser interferometric method for determining the carrier diffusion length in semiconductors". United States. https://doi.org/10.1134/S1063782615090201.
@article{osti_22469808,
title = {Laser interferometric method for determining the carrier diffusion length in semiconductors},
author = {Manukhov, V. V. and Fedortsov, A. B. and Ivanov, A. S., E-mail: ivaleks58@gmail.com},
abstractNote = {A new laser interferometric method for measuring the carrier diffusion length in semiconductors is proposed. The method is based on the interference–absorption interaction of two laser radiations in a semiconductor. Injected radiation generates additional carriers in a semiconductor, which causes a change in the material’s optical constants and modulation of the probing radiation passed through the sample. When changing the distance between carrier generation and probing points, a decrease in the carrier concentration, which depends on the diffusion length, is recorded. The diffusion length is determined by comparing the experimental and theoretical dependences of the probe signal on the divergence of the injector and probe beams. The method is successfully tested on semiconductor samples with different thicknesses and surface states and can be used in scientific research and the electronics industry.},
doi = {10.1134/S1063782615090201},
url = {https://www.osti.gov/biblio/22469808}, journal = {Semiconductors},
issn = {1063-7826},
number = 9,
volume = 49,
place = {United States},
year = {Tue Sep 15 00:00:00 EDT 2015},
month = {Tue Sep 15 00:00:00 EDT 2015}
}