skip to main content

SciTech ConnectSciTech Connect

Title: On the tensoresistance of n-Ge and n-Si crystals with radiation-induced defects

A variation in the tensoresistance of n-Ge:Sb and n-Si:As crystals as a result of irradiation with γ-ray photons ({sup 60}Co source) at fixed temperatures under conditions of the application of uniaxial elastic stress (0 ≤ X ≤ 1.2 GPa) along the main crystallographic direction is studied. It is found that, in the case of the deformation axis being in an asymmetric position relative to the isoenergetic ellipsoids, there is a maximum for the dependences of the tensoresistance ρ{sub X}/ρ{sub 0} = f(X); an explanation as to the nature of the observed effect is suggested. Tensoresistance is revealed in unirradiated n-Si:As crystals in the case of the deformation axis being in a symmetric position relative to all isoenergetic ellipsoids; the value of the tensoresistance as a result of irradiation with γ-ray photons decreases. It is shown that this effect can be attributed to a variation in the mobility of electrons in the conduction band as a result of an increase in the transverse effective mass and the appearance of new deep-level centers under the effect of irradiation, respectively.
Authors:
 [1]
  1. National Academy of Sciences of Ukraine, Institute for Nuclear Research (Ukraine)
Publication Date:
OSTI Identifier:
22469807
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 9; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COBALT 60; CRYSTAL STRUCTURE; CRYSTALS; DEFORMATION; EFFECTIVE MASS; ELECTRIC CONDUCTIVITY; ELECTRONS; GAMMA RADIATION; IRRADIATION; N-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; PRESSURE RANGE GIGA PA; P-TYPE CONDUCTORS; STRESSES; SYMMETRY