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Title: Optical properties of ion-doped ZnO(Se) layers in the context of band anticrossing theory

The study of the optical properties of ZnO(Se) is a continuation of previous studies of ZnS(O), ZnSe(O), and CdS(O) systems in the context of band anticrossing theory. Selenium ions are implanted into high-purity zinc oxide crystals to a concentration of 10{sup 20} cm{sup –3}. The microcathodoluminescence spectra recorded with a scanning electron microscope at a temperature of 100 K provide information from the bulk of the implanted layer. The origin of the orange-red luminescence of ZnO(Se)–Zn layers is clarified. Orangered luminescence is thought to be a result of the formation of a highly mismatched alloy system, in which ZnSe(O) is formed during implantation and radiation annealing. Data suggesting that the green luminescence of pure self-activated ZnO–Zn is the self-activated (SA) emission studied in detail for other II–VI compounds (ZnS(O), ZnSe(O)) and defined by intrinsic defect complexes (A centers) are reported.
Authors:
 [1] ;  [2] ;  [1] ;  [3]
  1. National Research University “Moscow Power Engineering Institute” (Russian Federation)
  2. Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)
  3. Russian Academy of Sciences, Frumkin Institute of Physical Chemistry and Electrochemistry (Russian Federation)
Publication Date:
OSTI Identifier:
22469806
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 9; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; A CENTERS; ALLOY SYSTEMS; ANNEALING; CADMIUM SULFIDES; CONCENTRATION RATIO; CRYSTALS; DOPED MATERIALS; EMISSION SPECTRA; EMISSION SPECTROSCOPY; ION IMPLANTATION; LAYERS; OPTICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY; SELENIUM IONS; ZINC OXIDES; ZINC SELENIDES; ZINC SULFIDES