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Title: An origin of orange (2 eV) photoluminescence in SiO{sub 2} films implanted with high Si{sup +}-ion doses

The photoluminescence and photoluminescence excitation spectra of SiO{sub 2} films implanted with high (3 at %) Si{sup +}-ion doses are studied in relation to the temperature of postimplantation annealing. It is shown that two photoluminescence bands with peaks at 2.7 and 2 eV are dominant in the spectra. As the annealing temperature is increased, the relation between the intensities of the 2.7 and 2 eV bands changes in favor of the former one. Both of the photoluminescence bands have their main excitation peak at the energy 5.1 eV. The excitation spectrum of the ∼2-eV band exhibits also peaks at 3.8 and 4.6 eV. It is concluded that, in the implanted SiO{sub 2} films, the orange photoluminescence band originates from radiative transitions between levels of centers associated with a deficiency of oxygen (≡Si–Si≡ or =Si:) and the levels of nonbridging oxygen (≡Si–O•)
Authors:
 [1]
  1. Russian Academy of Sciences, A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
Publication Date:
OSTI Identifier:
22469799
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 9; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTRA; ABSORPTION SPECTROSCOPY; ANNEALING; EMISSION SPECTRA; EMISSION SPECTROSCOPY; EV RANGE; EXCITATION; FILMS; ION IMPLANTATION; OXYGEN; PHOTOLUMINESCENCE; SILICON IONS; SILICON OXIDES