skip to main content

SciTech ConnectSciTech Connect

Title: On a chaotic potential at the surface of a compensated semiconductor under conditions of the self-assembly of electrically active defects

Natural irregularities of the electric potential on the surface of a semiconductor under conditions of the partial self-assembly of electrically active defects, i.e., on the formation of donor–acceptor pairs in depletion layers, are studied. The amplitude and character of the spatial distribution of the chaotic potential on the surface of a semiconductor in the cases of localized and delocalized states are determined. The dependence of the amplitude of the chaotic potential on the degree of compensation of the semiconductor is obtained.
Authors:
;  [1]
  1. St. Petersburg State Polytechnic University (Russian Federation)
Publication Date:
OSTI Identifier:
22469797
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 9; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHAOS THEORY; DEPLETION LAYER; ELECTRIC POTENTIAL; SEMICONDUCTOR MATERIALS; SPATIAL DISTRIBUTION; SURFACES