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Title: Characterization of the spatial inhomogeneity of heterointerfaces in GaAs/AlGaAs quantum wells by photoreflectance spectroscopy

GaAs/AlGaAs quantum-well heterostructures with well widths from 20 to 35 nm are investigated by photoreflectance spectroscopy. The broadening of spectral lines related to band-to-band transitions increases with the transition energy and decreases with the well width. The observed decrease in the broadening parameter with increasing well width is explained in terms of spatial inhomogeneity of the heterointerfaces. According to the experimental data, the interface inhomogeneity in the structures under study is 0.34–0.39 nm (1.3–1.4 monolayers)
Authors:
;  [1] ;  [2] ;  [3] ;  [1]
  1. Moscow State University, Faculty of Physics (Russian Federation)
  2. Russian Academy of Sciences, Institute of Microwave Semiconductor Electronics (Russian Federation)
  3. Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22469794
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 9; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION SPECTROSCOPY; ALUMINIUM ARSENIDES; GALLIUM ARSENIDES; HETEROJUNCTIONS; INTERFACES; LINE BROADENING; QUANTUM WELLS; SPECTRAL REFLECTANCE