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Title: Photoluminescence properties of modulation-doped In{sub x}Al{sub 1–x}As/In{sub y}Ga{sub 1–y}As/In{sub x}Al{sub 1–x}As structures with strained inas and gaas nanoinserts in the quantum well

The photoluminescence spectra of modulation-doped InAlAs/InGaAs/InAlAs heterostructures with quantum wells containing thin strained InAs and GaAs inserts are investigated. It is established that the insertion of pair InAs layers and/ or a GaAs transition barriers with a thickness of 1 nm into a quantum well leads to a change in the form and energy position of the photoluminescence spectra as compared with a uniform In{sub 0.53}Ga{sub 0.47}As quantum well. Simulation of the band structure shows that this change is caused by a variation in the energy and wave functions of holes. It is demonstrated that the use of InAs inserts leads to the localization of heavy holes near the InAs layers and reduces the energy of optical transitions, while the use of GaAs transition barriers can lead to inversion of the positions of the light- and heavy-hole subbands in the quantum well. A technique for separately controlling the light- and heavy-hole states by varying the thickness and position of the GaAs and InAs inserts in the quantum well is suggested.
Authors:
 [1] ;  [2] ; ; ; ; ;  [1]
  1. Russian Academy of Sciences, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation)
  2. National Research Nuclear University “MEPhI” (Russian Federation)
Publication Date:
OSTI Identifier:
22469793
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 9; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION SPECTROSCOPY; ALUMINIUM ARSENIDES; COMPARATIVE EVALUATIONS; DOPED MATERIALS; ELECTRONIC STRUCTURE; GALLIUM ARSENIDES; HETEROJUNCTIONS; HOLES; INDIUM ARSENIDES; LAYERS; MODULATION; PHOTOLUMINESCENCE; QUANTUM WELLS; STRAINS; VISIBLE RADIATION; X-RAY SPECTROSCOPY