Photoluminescence properties of modulation-doped In{sub x}Al{sub 1–x}As/In{sub y}Ga{sub 1–y}As/In{sub x}Al{sub 1–x}As structures with strained inas and gaas nanoinserts in the quantum well

Journal Article · Tue Sep 15 00:00:00 EDT 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615090122· OSTI ID:22469793

Vasil’evskii, I. S. ^[1]; Klimov, E. A.; Klochkov, A. N.; Lavruhin, D. V.; Pushkarev, S. S.; Maltsev, P. P. ^[2]

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1. National Research Nuclear University “MEPhI” (Russian Federation)
2. Russian Academy of Sciences, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation)

The photoluminescence spectra of modulation-doped InAlAs/InGaAs/InAlAs heterostructures with quantum wells containing thin strained InAs and GaAs inserts are investigated. It is established that the insertion of pair InAs layers and/ or a GaAs transition barriers with a thickness of 1 nm into a quantum well leads to a change in the form and energy position of the photoluminescence spectra as compared with a uniform In{sub 0.53}Ga{sub 0.47}As quantum well. Simulation of the band structure shows that this change is caused by a variation in the energy and wave functions of holes. It is demonstrated that the use of InAs inserts leads to the localization of heavy holes near the InAs layers and reduces the energy of optical transitions, while the use of GaAs transition barriers can lead to inversion of the positions of the light- and heavy-hole subbands in the quantum well. A technique for separately controlling the light- and heavy-hole states by varying the thickness and position of the GaAs and InAs inserts in the quantum well is suggested.

• OSTI ID: 22469793
• Journal Information: Semiconductors, Vol. 49, Issue 9; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ABSORPTION SPECTROSCOPY
ALUMINIUM ARSENIDES
COMPARATIVE EVALUATIONS
DOPED MATERIALS
ELECTRONIC STRUCTURE
GALLIUM ARSENIDES
HETEROJUNCTIONS
HOLES
INDIUM ARSENIDES
LAYERS
MODULATION
PHOTOLUMINESCENCE
QUANTUM WELLS
STRAINS
VISIBLE RADIATION
X-RAY SPECTROSCOPY