Defect-related luminescence in silicon p{sup +}–n junctions
- Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
Ultra-shallow p{sup +}–n junctions fabricated by the silicon planar technology based on the short-time nonequilibrium diffusion of boron from the gas phase into n-Si (100) substrates upon their preliminary oxidation and the opening of windows in SiO{sub 2} by electron lithography and reactive ion etching are examined. The electroand photoluminescence spectra measured in the study demonstrate emission in the range 1–1.6 µm, which is indicative of the presence of a high concentration of defects that probably appear as a result of the amorphizing effect of ions in the etching stage.
- OSTI ID:
- 22469791
- Journal Information:
- Semiconductors, Vol. 49, Issue 9; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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