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Title: Defect-related luminescence in silicon p{sup +}–n junctions

Ultra-shallow p{sup +}–n junctions fabricated by the silicon planar technology based on the short-time nonequilibrium diffusion of boron from the gas phase into n-Si (100) substrates upon their preliminary oxidation and the opening of windows in SiO{sub 2} by electron lithography and reactive ion etching are examined. The electroand photoluminescence spectra measured in the study demonstrate emission in the range 1–1.6 µm, which is indicative of the presence of a high concentration of defects that probably appear as a result of the amorphizing effect of ions in the etching stage.
Authors:
; ; ;  [1]
  1. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22469791
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 9; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BORON; CONCENTRATION RATIO; DIFFUSION; ELECTRONS; EMISSION SPECTRA; ETCHING; OXIDATION; PHOTOLUMINESCENCE; P-N JUNCTIONS; SILICA; SILICON; SILICON OXIDES; SUBSTRATES