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Title: On the charge neutrality level and the electronic properties of interphase boundaries in the layered ε-GaSe semiconductor

The height of the (Au, Pd, Pt, Cu, Ag, Sn, In, Al, Mg, Ca, Li, Cs)/GaSe(0001) Schottky barrier as a function of the metal work function and the energy-band offsets in InSe(0001)/GaSe(0001) and GaSe(0001)/Si(111) heteropairs are analyzed within the context of the concept of the charge neutrality level, CNL{sub vb}(GaSe) = E{sub v} + 0.83 eV, with consideration for partial screening of the interface electrostatic dipole by metal- or semiconductor-induced tunneling states at the GaSe(0001) surface.
Authors:
;  [1] ;  [2]
  1. Tomsk State University (Russian Federation)
  2. Kemerovo State University (Russian Federation)
Publication Date:
OSTI Identifier:
22469725
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 10; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COPPER; DIFFUSION BARRIERS; DIPOLES; EV RANGE; GALLIUM SELENIDES; GOLD; INDIUM SELENIDES; INTERFACES; LITHIUM; MAGNESIUM; PALLADIUM; SCHOTTKY EFFECT; SEMICONDUCTOR MATERIALS; SILICON; SILVER; SURFACES; TUNNEL EFFECT; WORK FUNCTIONS