On the charge neutrality level and the electronic properties of interphase boundaries in the layered ε-GaSe semiconductor
- Tomsk State University (Russian Federation)
- Kemerovo State University (Russian Federation)
The height of the (Au, Pd, Pt, Cu, Ag, Sn, In, Al, Mg, Ca, Li, Cs)/GaSe(0001) Schottky barrier as a function of the metal work function and the energy-band offsets in InSe(0001)/GaSe(0001) and GaSe(0001)/Si(111) heteropairs are analyzed within the context of the concept of the charge neutrality level, CNL{sub vb}(GaSe) = E{sub v} + 0.83 eV, with consideration for partial screening of the interface electrostatic dipole by metal- or semiconductor-induced tunneling states at the GaSe(0001) surface.
- OSTI ID:
- 22469725
- Journal Information:
- Semiconductors, Vol. 49, Issue 10; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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